130 silicon npn triple diffused planar transistor (high voltage and high speed switchihg transistor) application : switching regulator and general purpose symbol v cbo v ceo v ebo i c i b p c tj t stg ratings 600 400 10 5( pulse 10) 2 30(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? n absolute maximum ratings n electrical characteristics symbol i cbo i ebo v (br)ceo h fe v ce (sat) v be (sat) f t c ob ratings 100 max 10 max 400 min 10 to 30 0.5 max 1.3 max 20 typ 30 typ unit m a m a v v v mhz pf conditions v cb =500v v eb =10v i c =25ma v ce =4v, i c =1.5a i c =1.5a, i b =0.3a i c =1.5a, i b =0.3a v ce =12v, i e =?.3a v cb =10v, f=1mhz 2sc5130 (ta=25?) (ta=25?) n typical switching characteristics (common emitter) v cc (v) 200 r l ( ) 133 i c (a) 1.5 v bb2 (v) ? i b2 (a) ?.3 t on ( m s) 1 max t stg ( m s) 2 max t f ( m s) 0.3 max i b1 (a) 0.15 v bb1 (v) 10 external dimensions fm20(to220f) ?.3 ?.2 10.1 ?.2 4.0 ?.2 16.9 ?.3 13.0min 8.4 ?.2 0.8 ?.2 3.9 ?.2 2.54 2.54 1.35 ?.15 0.85 +0.2 -0.1 1.35 ?.15 2.2 ?.2 4.2 ?.2 2.8 c 0.5 2.4 ?.2 0.45 +0.2 -0.1 be c a b weight : approx 2.0g a. part no. b. lot no. i c v ce characteristics (typical) h fe i c characteristics (typical) t on ? stg ? f i c characteristics (typical) q j-a t characteristics i c v be temperature characteristics (typical) v ce (sat) i c characteristics (typical) pc ta derating reverse bias safe operating area safe operating area (single pulse) 0.01 0.05 0.1 0.5 1 5 0 0.5 1.5 1.0 collector current i c (a) i c/ i b =5 const. 125?c (case temp) 25?c (case temp) ?5?c (case temp) collector-emitter saturation voltage v ce(sat) (v) 0.01 0.1 0.05 1 5 0.5 5 10 50 collector current i c (a) dc current gain h fe (v ce =4v) 125?c 25?c ?5?c 0.1 3 1 0.5 0.1 0.5 2 1 switching time t on t stg t f ( s) 0 2 1 4 3 5 0 1.4 1.2 0.4 0.6 0.8 1.0 0.2 base-emittor voltage v be (v) collector current i c (a) (v ce =4v) 125?c (case temp) ?5?c (case temp) 25?c (case temp) collector current i c (a) t stg t on t f v cc 200v i c :i b1 :? b2 =10:1:2 0.4 1 5 0.5 1 10 100 1000 time t(ms) transient thermal resistance q j-a (?c/w) 30 20 10 2 0 0 25 50 75 100 125 150 ambient temperature ta(?c) maximum power dissipation p c (w) with infinite heatsink without heatsink 10 50 5 500 100 1 0.5 0.1 10 20 5 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling l=3mh ? b2 =0.5a duty:less than 1% 10 50 5 100 500 1 0.5 0.1 10 20 5 collector-emitter voltage v ce (v) collector current i c (a) 100 s 50 s without heatsink natural cooling 0 0 2 1 5 3 4 2 134 collector-emitter voltage v ce (v) collector current i c (a) 800ma 500ma 150ma 300ma i b =50ma
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